C3M0065090D
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency
Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies

Package

VDS ID @ 25˚C RDS(on)

900 V 36 A 65 mΩ

Part Number C3M0065090D

Package TO-247-3

Marking C3M0065090

Maximum Ratings (TC = 25 ˚C unless otherwise specified)

Symbol

Parameter

Value

VDSmax VGSmax VGSop

Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static)

ID

Continuous Drain Current

900 -8/+19 -4/+15
36 23

ID(pulse) Pulsed Drain Current

90

EAS

Avalanche energy, Single pulse

PD

Power Dissipation

TJ , Tstg Operating Junction and Storage Temperature

TL

Solder Temperature

Md

Mounting Torque

Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V

110
125
-55 to +150 260
1 8.8

Unit

Test Conditions

V VGS = 0 V, ID = 100 μA V AC (f >1 Hz) V Static
VGS = 15 V, TC = 25˚C A
VGS = 15 V, TC = 100˚C

A Pulse width tP limited by Tjmax

mJ ID = 22A, VDD = 50V W TC=25˚C, TJ = 150 ˚C

˚C

˚C 1.6mm (0.063”) from case for 10s

Nm lbf-in

M3 or 6-32 screw

Note
Note: 1 Note: 2 Fig. 19
Fig. 22
Fig. 20

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C3M0065090D Rev. D, 06-2019

Electrical Characteristics (TC = 25˚C unless otherwise specified)

Symbol

Parameter

V(BR)DSS Drain-Source Breakdown Voltage

VGS(th)

Gate Threshold Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Source Leakage Current

RDS(on) Drain-Source On-State Resistance

gfs

Transconductance

Min. 900 1.8

Typ.
2.1 1.6 1 10 65 90 16 13

Ciss

Input Capacitance

760

Coss

Output Capacitance

66

Crss

Reverse Transfer Capacitance

5.0

Eoss

Coss Stored Energy

16

EON

Turn-On Switching Energy (Body Diode FWD)

343

EOFF

Turn Off Switching Energy (Body Diode FWD)

46

td(on)

Turn-On Delay Time

45

tr

Rise Time

13

td(off)

Turn-Off Delay Time

20

tf

Fall Time

8

RG(int)

Internal Gate Resistance

3.5

Qgs

Gate to Source Charge

9

Qgd

Gate to Drain Charge

13

Qg

Total Gate Charge

35

Max.
3.5
100 250 78

Unit V V V μA nA
mΩ
S

Test Conditions VGS = 0 V, ID = 100 μA VDS = VGS, ID = 5 mA VDS = VGS, ID = 5 mA, TJ = 150ºC VDS = 900 V, VGS = 0 V VGS = 15 V, VDS = 0 V VGS = 15 V, ID = 20 A VGS = 15 V, ID = 20A, TJ = 150ºC VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 150ºC

pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV
μJ
μJ VDS = 400 V, VGS = -4 V/15 V, ID = 20 A, RG(ext) = 2.5 Ω, L= 65.7 μH, TJ = 150ºC

VDD = 400 V, VGS = -4 V/15 V

ns

ID = 20 A, RG(ext) = 2.5 Ω,

Timing relative to VDS

Inductive load

Ω f = 1 MHz, VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V nC ID = 20 A
Per IEC60747-8-4 pg 21

Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)

Symbol Parameter

VSD

Diode Forward Voltage

IS IS, pulse
trr Qrr Irrm

Continuous Diode Forward Current Diode pulse Current Reverse Recovery time Reverse Recovery Charge Peak Reverse Recovery Current

Typ. 4.4 4.0
26 145
8

Max.
23.5 90

Unit V V A A ns nC A

Test Conditions VGS = -4 V, ISD = 10 A VGS = -4 V, ISD = 10 A, TJ = 150 °C VGS = -4 V VGS = -4 V, pulse width tP limited by Tjmax
VGS = -4 V, ISD = 20 A, VR = 400 V dif/dt = 900 A/µs, TJ = 150 °C

Note Fig. 11
Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 Fig. 16 Fig. 26, Note 3
Fig. 27
Fig. 12
Note Fig. 8, 9, 10 Note 1 Note 1
Note 1

Thermal Characteristics

Symbol Parameter

Max.

Unit

Test Conditions

RθJC

Thermal Resistance from Junction to Case

RθJA

Thermal Resistance From Junction to Ambient

1.0 °C/W
40

Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode

Note Fig. 21

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C3M0065090D Rev. D, 06-2019

Typical Performance

Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

80

Conditions:

70

TJ = -55 °C tp = < 200 µs

60

50

40

30

20

10

0

0.0

2.0

VGS = 15V VGS = 13V

4.0

6.0

8.0

Drain-Source Voltage, VDS (V)

VGS = 11V

VGS = 9V

VGS = 7V

10.0

12.0

Figure 1. Output Characteristics TJ = -55 ºC

80 Conditions:
70 TJ = 150 °C tp = < 200 µs
60
50

VGS = 11V

VGS = 13V

VGS = 15V

VGS = 9V

40

30
VGS = 7V
20

10

0

0.0

2.0

4.0

6.0

8.0

10.0

12.0

Drain-Source Voltage, VDS (V)

Figure 3. Output Characteristics TJ = 150 ºC

120 Conditions: VGS = 15 V
100 tp < 200 µs
80
60

TJ = 150 °C
TJ = -55 °C TJ = 25 °C

40

20

0

0

10

20

30

40

50

60

Drain-Source Current, IDS (A)

Figure 5. On-Resistance vs. Drain Current For Various Temperatures

On Resistance, RDS On (mOhms)

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C3M0065090D Rev. D, 06-2019

On Resistance, RDS On (mOhms)

On Resistance, RDS On (P.U.)

Drain-Source Current, IDS (A)

80

Conditions:

70

TJ = 25 °C tp = < 200 µs

60

50

40

30

20

10

0

0.0

2.0

VGS = 15V

VGS = 13V

VGS = 11V

VGS = 9V

VGS = 7V

4.0

6.0

8.0

Drain-Source Voltage, VDS (V)

10.0

12.0

Figure 2. Output Characteristics TJ = 25 ºC

2.0 Conditions:
1.8 IDS = 20 A VGS = 15 V
1.6 tp < 200 µs
1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-50

-25

0

25

50

75

100

125

150

Junction Temperature, TJ (°C)

Figure 4. Normalized On-Resistance vs. Temperature

140

Conditions:

IDS = 20 A

120

tp < 200 µs

100

VGS = 11 V

80

VGS = 13 V

60

VGS = 15 V

40

20

0

-50

-25

0

25

50

75

100

125

150

Junction Temperature, TJ (°C)

Figure 6. On-Resistance vs. Temperature For Various Gate Voltage

Drain-Source Current, IDS (A)

Typical Performance
50 Conditions: VDS = 20 V tp < 200 µs
40
30
20

TJ = 150 °C TJ = 25 °C

TJ = -55 °C

10

Drain-Source Current, IDS (A)

0 0

-9

-8

2

4

6

8

Gate-Source Voltage, VGS (V)

Figure 7. Transfer Characteristic for Various Junction Temperatures

-7

-6

-5

-4

-3

-2

-1

VGS = -4 V

VGS = 0 V

10
0 0 -10 -20

VGS = -2 V

-30

-40

-50

Drain-Source Voltage VDS (V)

-60

Conditions:

-70

TJ = 25°C

tp < 200 µs

-80

Figure 9. Body Diode Characteristic at 25 ºC

3.0

Conditons

VGS = VDS

2.5

IDS = 5 mA

2.0

1.5

1.0

0.5

0.0

-50

-25

0

25

50

75

100

125

150

Junction Temperature TJ (°C)

Figure 11. Threshold Voltage vs. Temperature

Threshold Voltage, Vth (V)

Gate-Source Voltage, VGS (V)

Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0

-10

VGS = -4 V

VGS = 0 V

-20

-30 VGS = -2 V
-40
-50

Drain-Source Voltage VDS (V)

-60

Conditions: TJ = -55°C

-70

tp < 200 µs

-80

Figure 8. Body Diode Characteristic at -55 ºC

-10 -9

-8

-7

-6

-5

-4

-3

-2

-1

0

0

-10

VGS = -4 V

VGS = 0 V

-20

-30 VGS = -2 V
-40

-50

Drain-Source Voltage VDS (V)

-60

Conditions:

-70

TJ = 150°C

tp < 200 µs

-80

Figure 10. Body Diode Characteristic at 150 ºC
16 Conditions: IDS = 20 A IGS = 50 mA
12 VDS = 400 V TJ = 25 °C

8

4

0

-4

0

5

10

15

20

25

30

35

40

Gate Charge, QG (nC)

Figure 12. Gate Charge Characteristics

4

C3M0065090D Rev. D, 06-2019

Typical Performance

-8

-7

-6

-5

-4

-3

-2

VGS = 0 V VGS = 5 V

Drain-Source Current, IDS (A)

Drain-Source Voltage VDS (V)

-1

0

0

-10

-20

-30
VGS = 10 V -40
VGS = 15 V
-50

-60

Conditions: TJ = -55 °C

-70

tp < 200 µs

-80

Figure 13. 3rd Quadrant Characteristic at -55 ºC

Drain-Source Current, IDS (A)

-8

-7

-6

-5

-4

-3

-2

-1

0

0

VGS = 0 V -10

-20 VGS = 5 V
-30 VGS = 10 V
-40 VGS = 15 V
-50

-60

Drain-Source Voltage VDS (V)

Conditions:

-70

TJ = 150 °C

tp < 200 µs

-80

Figure 15. 3rd Quadrant Characteristic at 150 ºC

10000 1000

Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz
Ciss

Coss 100

Stored Energy, EOSS (µJ)

Drain-Source Current, IDS (A)

-8

-7

-6

-5

-4

-3

-2

-1

0

0

VGS = 0 V VGS = 5 V

-10
-20
-30 VGS = 10 V
-40 VGS = 15 V
-50

Drain-Source Voltage VDS (V)

-60

Conditions: TJ = 25 °C

-70

tp < 200 µs

-80

Figure 14. 3rd Quadrant Characteristic at 25 ºC

35

30

25

20

15

10

5

0 0 100 200 300 400 500 600 700 800 900 1000 Drain to Source Voltage, VDS (V)

Figure 16. Output Capacitor Stored Energy

10000 1000

Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz
Ciss

100

Coss

Capacitance (pF)

Capacitance (pF)

10

Crss

1

0

50

100

150

200

Drain-Source Voltage, VDS (V)

Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V)

10 Crss
1 0 100 200 300 400 500 600 700 800 900 Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V)

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C3M0065090D Rev. D, 06-2019

Typical Performance

Drain-Source Continous Current, IDS (DC) (A)

40

Conditions:

35

TJ ≤ 150 °C

30

25

20

15

10

5

0

-55

-30

-5

20

45

70

95

Case Temperature, TC (°C)

120 145

Figure 19. Continuous Drain Current Derating vs. Case Temperature

Junction To Case Impedance, ZthJC (oC/W)

1
0.5

0.3

0.1
100E-3
0.05

0.02 0.01

SinglePulse

10E-3

1E-6

10E-6 100E-6 1E-3

10E-3 100E-3

1

10

Time, tp (s)

Figure 21. Transient Thermal Impedance (Junction - Case)

1800 1600 1400 1200 1000

Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0065090D L = 65.7 μH

ETotal EOn

800

600

400

EOff

200

0

0

10

20

30

40

50

Drain to Source Current, IDS (A)

Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V)

Switching Loss (µJ)

Switching Loss (µJ)

Drain-Source Current, IDS (A)

Maximum Dissipated Power, Ptot (W)

140 Conditions: TJ ≤ 150 °C
120

100

80

60

40

20

0

-55

-30

-5

20

45

70

95

Case Temperature, TC (°C)

120 145

Figure 20. Maximum Power Dissipation Derating vs. Case Temperature

100.00

10.00

Limited by RDS On

1.00

10 µs 100 µs 1 ms
100 ms

0.10
Conditions: TC = 25 °C D = 0, Parameter: tp 0.01 0.1

1

10

100

Drain-Source Voltage, VDS (V)

1000

Figure 22. Safe Operating Area

1200 1000 800

Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0065090D L = 65.7 μH

600

ETotal EOn

400 EOff
200

0

0

5

10

15

20

25

30

35

40

45

Drain to Source Current, IDS (A)

Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V)

6

C3M0065090D Rev. D, 06-2019

Typical Performance

600 Conditions:

TJ = 25 °C

500

VDD = 400 V IDS = 20 A

VGS = -4V/+15 V

FWD = C3M0065090D 400 L = 65.7 μH

300

ETotal EOn

Switching Loss (µJ)

200
EOff 100

0

0

5

10

15

20

25

External Gate Resistor RG(ext) (Ohms)

Switching Times (ns)

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
100 Conditions: TJ = 25 °C VDD = 400 V
80 IDS = 20 A VGS = -4V/+15 V FWD = C3M0065090D L = 65.7 μH
60 td(on)

40
20
0 0

td(off) tr tf

5

10

15

20

25

External Gate Resistor RG(ext) (Ohms)

35 30 25 20 15 10
5 0
0

Figure 27. Switching Times vs. RG(ext)
Conditons: VDD = 50 V

20

40

60

80

100

Time in Avalanche TAV (us)

Figure 29. Single Avalanche SOA curve

Avalanche Current (A)

Switching Loss (µJ)

600 Conditions:

IDS = 20 A

500

VDD = 400 V RG(ext) = 2.5 Ω

VGS = -4V/+15 V

FWD = C3M0065090D 400 L = 65.7 μH

ETotal EOn

300

200

100
0 0

EOff

25

50

75

100

125

150

175

Junction Temperature, TJ (°C)

Figure 26. Clamped Inductive Switching Energy vs. Temperature

Figure 28. Switching Times Definition

7

C3M0065090D Rev. D, 06-2019

Test Circuit Schematic
VDC

RG
VGS= - 4V

Q1
C3M0065090D

Q2 RG
C3M0065090D D.U.T

Figure 30. Clamped Inductive Switching Waveform Test Circuit

Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

8

C3M0065090D Rev. D, 06-2019

Package Dimensions
Package TO-247-3

T

U

Pinout Information:

• Pin 1 = Gate

• Pin 2, 4 = Drain

V

W

• Pin 3 = Source

Recommended Solder Pad Layout

POS
A A1 A2 b b1 b2 b3 b4 c D D1 D2 E E1 E2 E3 E4 e N L L1 ØP Q S T U V W

Inches

Min

Max

.190

.205

.090

.100

.075

.085

.042

.052

.075

.095

.075

.085

.113

.133

.113

.123

.022

.027

.819

.831

.640

.695

.037

.049

.620

.635

.516

.557

.145

.201

.039

.075

.487

.529

.214 BSC

3

.780

.800

.161

.173

.138

.144

.216

.236

.238

.248

9˚

11˚

9˚

11˚

2˚

8˚

2˚

8˚

Millimeters

Min

Max

4.83

5.21

2.29

2.54

1.91

2.16

1.07

1.33

1.91

2.41

1.91

2.16

2.87

3.38

2.87

3.13

0.55

0.68

20.80

21.10

16.25

17.65

0.95

1.25

15.75

16.13

13.10

14.15

3.68

5.10

1.00

1.90

12.38

13.43

5.44 BSC

3

19.81

20.32

4.10

4.40

3.51

3.65

5.49

6.00

6.04

6.30

9˚

11˚

9˚

11˚

2˚

8˚

2˚

8˚

TO-247-3

9

C3M0065090D Rev. D, 06-2019

Notes
• RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
• SPICE Models: http://wolfspeed.com/power/tools-and-support • SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support • SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support

Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

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C3M0065090D Rev. D, 06-2019

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

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