1708 lines
14 KiB
Plaintext
1708 lines
14 KiB
Plaintext
C3M0065090D
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Silicon Carbide Power MOSFET TM
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C3M MOSFET Technology
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N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
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Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency
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Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies
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Package
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VDS ID @ 25˚C RDS(on)
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900 V 36 A 65 mΩ
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Part Number C3M0065090D
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Package TO-247-3
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Marking C3M0065090
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Maximum Ratings (TC = 25 ˚C unless otherwise specified)
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Symbol
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Parameter
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Value
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VDSmax VGSmax VGSop
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Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static)
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ID
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Continuous Drain Current
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900 -8/+19 -4/+15
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36 23
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ID(pulse) Pulsed Drain Current
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90
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EAS
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Avalanche energy, Single pulse
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PD
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Power Dissipation
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TJ , Tstg Operating Junction and Storage Temperature
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TL
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Solder Temperature
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Md
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Mounting Torque
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Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V
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110
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125
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-55 to +150 260
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1 8.8
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Unit
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Test Conditions
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V VGS = 0 V, ID = 100 μA V AC (f >1 Hz) V Static
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VGS = 15 V, TC = 25˚C A
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VGS = 15 V, TC = 100˚C
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A Pulse width tP limited by Tjmax
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mJ ID = 22A, VDD = 50V W TC=25˚C, TJ = 150 ˚C
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˚C
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˚C 1.6mm (0.063”) from case for 10s
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Nm lbf-in
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M3 or 6-32 screw
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Note
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Note: 1 Note: 2 Fig. 19
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Fig. 22
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Fig. 20
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1
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C3M0065090D Rev. D, 06-2019
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Electrical Characteristics (TC = 25˚C unless otherwise specified)
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Symbol
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Parameter
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V(BR)DSS Drain-Source Breakdown Voltage
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VGS(th)
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Gate Threshold Voltage
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IDSS
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Zero Gate Voltage Drain Current
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IGSS
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Gate-Source Leakage Current
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RDS(on) Drain-Source On-State Resistance
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gfs
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Transconductance
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Min. 900 1.8
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Typ.
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2.1 1.6 1 10 65 90 16 13
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Ciss
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Input Capacitance
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760
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Coss
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Output Capacitance
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66
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Crss
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Reverse Transfer Capacitance
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5.0
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Eoss
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Coss Stored Energy
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16
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EON
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Turn-On Switching Energy (Body Diode FWD)
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343
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EOFF
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Turn Off Switching Energy (Body Diode FWD)
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46
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td(on)
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Turn-On Delay Time
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45
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tr
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Rise Time
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13
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td(off)
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Turn-Off Delay Time
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20
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tf
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Fall Time
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8
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RG(int)
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Internal Gate Resistance
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3.5
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Qgs
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Gate to Source Charge
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9
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Qgd
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Gate to Drain Charge
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13
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Qg
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Total Gate Charge
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35
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Max.
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3.5
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100 250 78
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Unit V V V μA nA
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mΩ
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S
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Test Conditions VGS = 0 V, ID = 100 μA VDS = VGS, ID = 5 mA VDS = VGS, ID = 5 mA, TJ = 150ºC VDS = 900 V, VGS = 0 V VGS = 15 V, VDS = 0 V VGS = 15 V, ID = 20 A VGS = 15 V, ID = 20A, TJ = 150ºC VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 150ºC
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pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV
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μJ
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μJ VDS = 400 V, VGS = -4 V/15 V, ID = 20 A, RG(ext) = 2.5 Ω, L= 65.7 μH, TJ = 150ºC
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VDD = 400 V, VGS = -4 V/15 V
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ns
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ID = 20 A, RG(ext) = 2.5 Ω,
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Timing relative to VDS
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Inductive load
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Ω f = 1 MHz, VAC = 25 mV
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VDS = 400 V, VGS = -4 V/15 V nC ID = 20 A
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Per IEC60747-8-4 pg 21
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Reverse Diode Characteristics (TC = 25˚C unless otherwise specified)
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Symbol Parameter
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VSD
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Diode Forward Voltage
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IS IS, pulse
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trr Qrr Irrm
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Continuous Diode Forward Current Diode pulse Current Reverse Recovery time Reverse Recovery Charge Peak Reverse Recovery Current
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Typ. 4.4 4.0
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26 145
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8
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Max.
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23.5 90
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Unit V V A A ns nC A
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Test Conditions VGS = -4 V, ISD = 10 A VGS = -4 V, ISD = 10 A, TJ = 150 °C VGS = -4 V VGS = -4 V, pulse width tP limited by Tjmax
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VGS = -4 V, ISD = 20 A, VR = 400 V dif/dt = 900 A/µs, TJ = 150 °C
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Note Fig. 11
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Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 Fig. 16 Fig. 26, Note 3
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Fig. 27
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Fig. 12
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Note Fig. 8, 9, 10 Note 1 Note 1
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Note 1
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Thermal Characteristics
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Symbol Parameter
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Max.
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Unit
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Test Conditions
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RθJC
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Thermal Resistance from Junction to Case
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RθJA
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Thermal Resistance From Junction to Ambient
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1.0 °C/W
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40
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Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
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Note Fig. 21
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2
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C3M0065090D Rev. D, 06-2019
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Typical Performance
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Drain-Source Current, IDS (A)
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Drain-Source Current, IDS (A)
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80
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Conditions:
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70
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TJ = -55 °C tp = < 200 µs
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60
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50
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40
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30
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20
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10
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0
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0.0
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2.0
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VGS = 15V VGS = 13V
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4.0
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6.0
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8.0
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Drain-Source Voltage, VDS (V)
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VGS = 11V
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VGS = 9V
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VGS = 7V
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10.0
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12.0
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Figure 1. Output Characteristics TJ = -55 ºC
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80 Conditions:
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70 TJ = 150 °C tp = < 200 µs
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60
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50
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VGS = 11V
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VGS = 13V
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VGS = 15V
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VGS = 9V
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40
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30
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VGS = 7V
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20
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10
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0
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0.0
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2.0
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4.0
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6.0
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8.0
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10.0
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12.0
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Drain-Source Voltage, VDS (V)
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Figure 3. Output Characteristics TJ = 150 ºC
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120 Conditions: VGS = 15 V
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100 tp < 200 µs
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80
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60
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TJ = 150 °C
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TJ = -55 °C TJ = 25 °C
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40
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20
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0
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0
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10
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20
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30
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40
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50
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60
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Drain-Source Current, IDS (A)
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Figure 5. On-Resistance vs. Drain Current For Various Temperatures
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On Resistance, RDS On (mOhms)
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3
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C3M0065090D Rev. D, 06-2019
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On Resistance, RDS On (mOhms)
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On Resistance, RDS On (P.U.)
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Drain-Source Current, IDS (A)
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80
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Conditions:
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70
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TJ = 25 °C tp = < 200 µs
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60
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50
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40
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30
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20
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10
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0
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0.0
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2.0
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VGS = 15V
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VGS = 13V
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VGS = 11V
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VGS = 9V
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VGS = 7V
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4.0
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6.0
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8.0
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Drain-Source Voltage, VDS (V)
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10.0
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12.0
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Figure 2. Output Characteristics TJ = 25 ºC
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2.0 Conditions:
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1.8 IDS = 20 A VGS = 15 V
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1.6 tp < 200 µs
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1.4
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1.2
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1.0
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0.8
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0.6
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0.4
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0.2
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0.0
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-50
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-25
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0
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25
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50
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75
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100
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125
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150
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Junction Temperature, TJ (°C)
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Figure 4. Normalized On-Resistance vs. Temperature
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140
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Conditions:
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IDS = 20 A
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120
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tp < 200 µs
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100
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VGS = 11 V
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80
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VGS = 13 V
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60
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VGS = 15 V
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40
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20
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0
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-50
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-25
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0
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25
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50
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75
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100
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125
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150
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Junction Temperature, TJ (°C)
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Figure 6. On-Resistance vs. Temperature For Various Gate Voltage
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Drain-Source Current, IDS (A)
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Typical Performance
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50 Conditions: VDS = 20 V tp < 200 µs
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40
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30
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20
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TJ = 150 °C TJ = 25 °C
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TJ = -55 °C
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10
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Drain-Source Current, IDS (A)
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0 0
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-9
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-8
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2
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4
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6
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8
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Gate-Source Voltage, VGS (V)
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Figure 7. Transfer Characteristic for Various Junction Temperatures
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-7
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-6
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-5
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-4
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-3
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-2
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-1
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VGS = -4 V
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VGS = 0 V
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10
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0 0 -10 -20
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VGS = -2 V
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-30
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-40
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-50
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Drain-Source Voltage VDS (V)
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-60
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Conditions:
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-70
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TJ = 25°C
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tp < 200 µs
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-80
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Figure 9. Body Diode Characteristic at 25 ºC
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3.0
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Conditons
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VGS = VDS
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2.5
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IDS = 5 mA
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2.0
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1.5
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1.0
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0.5
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0.0
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-50
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-25
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0
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25
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50
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75
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100
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125
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150
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Junction Temperature TJ (°C)
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Figure 11. Threshold Voltage vs. Temperature
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Threshold Voltage, Vth (V)
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Gate-Source Voltage, VGS (V)
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Drain-Source Current, IDS (A)
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Drain-Source Current, IDS (A)
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-9
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-8
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-7
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-6
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-5
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-4
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-3
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-2
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-1
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0
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0
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-10
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VGS = -4 V
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VGS = 0 V
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-20
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-30 VGS = -2 V
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-40
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-50
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Drain-Source Voltage VDS (V)
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-60
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Conditions: TJ = -55°C
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-70
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tp < 200 µs
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-80
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Figure 8. Body Diode Characteristic at -55 ºC
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-10 -9
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-8
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-7
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-6
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-5
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-4
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-3
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-2
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-1
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0
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0
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-10
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VGS = -4 V
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VGS = 0 V
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-20
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-30 VGS = -2 V
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-40
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-50
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Drain-Source Voltage VDS (V)
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-60
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Conditions:
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-70
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TJ = 150°C
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tp < 200 µs
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-80
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Figure 10. Body Diode Characteristic at 150 ºC
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16 Conditions: IDS = 20 A IGS = 50 mA
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12 VDS = 400 V TJ = 25 °C
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8
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4
|
|
|
|
0
|
|
|
|
-4
|
|
|
|
0
|
|
|
|
5
|
|
|
|
10
|
|
|
|
15
|
|
|
|
20
|
|
|
|
25
|
|
|
|
30
|
|
|
|
35
|
|
|
|
40
|
|
|
|
Gate Charge, QG (nC)
|
|
|
|
Figure 12. Gate Charge Characteristics
|
|
|
|
4
|
|
|
|
C3M0065090D Rev. D, 06-2019
|
|
|
|
Typical Performance
|
|
|
|
-8
|
|
|
|
-7
|
|
|
|
-6
|
|
|
|
-5
|
|
|
|
-4
|
|
|
|
-3
|
|
|
|
-2
|
|
|
|
VGS = 0 V VGS = 5 V
|
|
|
|
Drain-Source Current, IDS (A)
|
|
|
|
Drain-Source Voltage VDS (V)
|
|
|
|
-1
|
|
|
|
0
|
|
|
|
0
|
|
|
|
-10
|
|
|
|
-20
|
|
|
|
-30
|
|
VGS = 10 V -40
|
|
VGS = 15 V
|
|
-50
|
|
|
|
-60
|
|
|
|
Conditions: TJ = -55 °C
|
|
|
|
-70
|
|
|
|
tp < 200 µs
|
|
|
|
-80
|
|
|
|
Figure 13. 3rd Quadrant Characteristic at -55 ºC
|
|
|
|
Drain-Source Current, IDS (A)
|
|
|
|
-8
|
|
|
|
-7
|
|
|
|
-6
|
|
|
|
-5
|
|
|
|
-4
|
|
|
|
-3
|
|
|
|
-2
|
|
|
|
-1
|
|
|
|
0
|
|
|
|
0
|
|
|
|
VGS = 0 V -10
|
|
|
|
-20 VGS = 5 V
|
|
-30 VGS = 10 V
|
|
-40 VGS = 15 V
|
|
-50
|
|
|
|
-60
|
|
|
|
Drain-Source Voltage VDS (V)
|
|
|
|
Conditions:
|
|
|
|
-70
|
|
|
|
TJ = 150 °C
|
|
|
|
tp < 200 µs
|
|
|
|
-80
|
|
|
|
Figure 15. 3rd Quadrant Characteristic at 150 ºC
|
|
|
|
10000 1000
|
|
|
|
Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz
|
|
Ciss
|
|
|
|
Coss 100
|
|
|
|
Stored Energy, EOSS (µJ)
|
|
|
|
Drain-Source Current, IDS (A)
|
|
|
|
-8
|
|
|
|
-7
|
|
|
|
-6
|
|
|
|
-5
|
|
|
|
-4
|
|
|
|
-3
|
|
|
|
-2
|
|
|
|
-1
|
|
|
|
0
|
|
|
|
0
|
|
|
|
VGS = 0 V VGS = 5 V
|
|
|
|
-10
|
|
-20
|
|
-30 VGS = 10 V
|
|
-40 VGS = 15 V
|
|
-50
|
|
|
|
Drain-Source Voltage VDS (V)
|
|
|
|
-60
|
|
|
|
Conditions: TJ = 25 °C
|
|
|
|
-70
|
|
|
|
tp < 200 µs
|
|
|
|
-80
|
|
|
|
Figure 14. 3rd Quadrant Characteristic at 25 ºC
|
|
|
|
35
|
|
|
|
30
|
|
|
|
25
|
|
|
|
20
|
|
|
|
15
|
|
|
|
10
|
|
|
|
5
|
|
|
|
0 0 100 200 300 400 500 600 700 800 900 1000 Drain to Source Voltage, VDS (V)
|
|
|
|
Figure 16. Output Capacitor Stored Energy
|
|
|
|
10000 1000
|
|
|
|
Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz
|
|
Ciss
|
|
|
|
100
|
|
|
|
Coss
|
|
|
|
Capacitance (pF)
|
|
|
|
Capacitance (pF)
|
|
|
|
10
|
|
|
|
Crss
|
|
|
|
1
|
|
|
|
0
|
|
|
|
50
|
|
|
|
100
|
|
|
|
150
|
|
|
|
200
|
|
|
|
Drain-Source Voltage, VDS (V)
|
|
|
|
Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V)
|
|
|
|
10 Crss
|
|
1 0 100 200 300 400 500 600 700 800 900 Drain-Source Voltage, VDS (V)
|
|
Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V)
|
|
|
|
5
|
|
|
|
C3M0065090D Rev. D, 06-2019
|
|
|
|
Typical Performance
|
|
|
|
Drain-Source Continous Current, IDS (DC) (A)
|
|
|
|
40
|
|
|
|
Conditions:
|
|
|
|
35
|
|
|
|
TJ ≤ 150 °C
|
|
|
|
30
|
|
|
|
25
|
|
|
|
20
|
|
|
|
15
|
|
|
|
10
|
|
|
|
5
|
|
|
|
0
|
|
|
|
-55
|
|
|
|
-30
|
|
|
|
-5
|
|
|
|
20
|
|
|
|
45
|
|
|
|
70
|
|
|
|
95
|
|
|
|
Case Temperature, TC (°C)
|
|
|
|
120 145
|
|
|
|
Figure 19. Continuous Drain Current Derating vs. Case Temperature
|
|
|
|
Junction To Case Impedance, ZthJC (oC/W)
|
|
|
|
1
|
|
0.5
|
|
|
|
0.3
|
|
|
|
0.1
|
|
100E-3
|
|
0.05
|
|
|
|
0.02 0.01
|
|
|
|
SinglePulse
|
|
|
|
10E-3
|
|
|
|
1E-6
|
|
|
|
10E-6 100E-6 1E-3
|
|
|
|
10E-3 100E-3
|
|
|
|
1
|
|
|
|
10
|
|
|
|
Time, tp (s)
|
|
|
|
Figure 21. Transient Thermal Impedance (Junction - Case)
|
|
|
|
1800 1600 1400 1200 1000
|
|
|
|
Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0065090D L = 65.7 μH
|
|
|
|
ETotal EOn
|
|
|
|
800
|
|
|
|
600
|
|
|
|
400
|
|
|
|
EOff
|
|
|
|
200
|
|
|
|
0
|
|
|
|
0
|
|
|
|
10
|
|
|
|
20
|
|
|
|
30
|
|
|
|
40
|
|
|
|
50
|
|
|
|
Drain to Source Current, IDS (A)
|
|
|
|
Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V)
|
|
|
|
Switching Loss (µJ)
|
|
|
|
Switching Loss (µJ)
|
|
|
|
Drain-Source Current, IDS (A)
|
|
|
|
Maximum Dissipated Power, Ptot (W)
|
|
|
|
140 Conditions: TJ ≤ 150 °C
|
|
120
|
|
|
|
100
|
|
|
|
80
|
|
|
|
60
|
|
|
|
40
|
|
|
|
20
|
|
|
|
0
|
|
|
|
-55
|
|
|
|
-30
|
|
|
|
-5
|
|
|
|
20
|
|
|
|
45
|
|
|
|
70
|
|
|
|
95
|
|
|
|
Case Temperature, TC (°C)
|
|
|
|
120 145
|
|
|
|
Figure 20. Maximum Power Dissipation Derating vs. Case Temperature
|
|
|
|
100.00
|
|
|
|
10.00
|
|
|
|
Limited by RDS On
|
|
|
|
1.00
|
|
|
|
10 µs 100 µs 1 ms
|
|
100 ms
|
|
|
|
0.10
|
|
Conditions: TC = 25 °C D = 0, Parameter: tp 0.01 0.1
|
|
|
|
1
|
|
|
|
10
|
|
|
|
100
|
|
|
|
Drain-Source Voltage, VDS (V)
|
|
|
|
1000
|
|
|
|
Figure 22. Safe Operating Area
|
|
|
|
1200 1000 800
|
|
|
|
Conditions: TJ = 25 °C VDD = 400 V RG(ext) = 2.5 Ω VGS = -4V/+15V FWD = C3M0065090D L = 65.7 μH
|
|
|
|
600
|
|
|
|
ETotal EOn
|
|
|
|
400 EOff
|
|
200
|
|
|
|
0
|
|
|
|
0
|
|
|
|
5
|
|
|
|
10
|
|
|
|
15
|
|
|
|
20
|
|
|
|
25
|
|
|
|
30
|
|
|
|
35
|
|
|
|
40
|
|
|
|
45
|
|
|
|
Drain to Source Current, IDS (A)
|
|
|
|
Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 400V)
|
|
|
|
6
|
|
|
|
C3M0065090D Rev. D, 06-2019
|
|
|
|
Typical Performance
|
|
|
|
600 Conditions:
|
|
|
|
TJ = 25 °C
|
|
|
|
500
|
|
|
|
VDD = 400 V IDS = 20 A
|
|
|
|
VGS = -4V/+15 V
|
|
|
|
FWD = C3M0065090D 400 L = 65.7 μH
|
|
|
|
300
|
|
|
|
ETotal EOn
|
|
|
|
Switching Loss (µJ)
|
|
|
|
200
|
|
EOff 100
|
|
|
|
0
|
|
|
|
0
|
|
|
|
5
|
|
|
|
10
|
|
|
|
15
|
|
|
|
20
|
|
|
|
25
|
|
|
|
External Gate Resistor RG(ext) (Ohms)
|
|
|
|
Switching Times (ns)
|
|
|
|
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
|
|
100 Conditions: TJ = 25 °C VDD = 400 V
|
|
80 IDS = 20 A VGS = -4V/+15 V FWD = C3M0065090D L = 65.7 μH
|
|
60 td(on)
|
|
|
|
40
|
|
20
|
|
0 0
|
|
|
|
td(off) tr tf
|
|
|
|
5
|
|
|
|
10
|
|
|
|
15
|
|
|
|
20
|
|
|
|
25
|
|
|
|
External Gate Resistor RG(ext) (Ohms)
|
|
|
|
35 30 25 20 15 10
|
|
5 0
|
|
0
|
|
|
|
Figure 27. Switching Times vs. RG(ext)
|
|
Conditons: VDD = 50 V
|
|
|
|
20
|
|
|
|
40
|
|
|
|
60
|
|
|
|
80
|
|
|
|
100
|
|
|
|
Time in Avalanche TAV (us)
|
|
|
|
Figure 29. Single Avalanche SOA curve
|
|
|
|
Avalanche Current (A)
|
|
|
|
Switching Loss (µJ)
|
|
|
|
600 Conditions:
|
|
|
|
IDS = 20 A
|
|
|
|
500
|
|
|
|
VDD = 400 V RG(ext) = 2.5 Ω
|
|
|
|
VGS = -4V/+15 V
|
|
|
|
FWD = C3M0065090D 400 L = 65.7 μH
|
|
|
|
ETotal EOn
|
|
|
|
300
|
|
|
|
200
|
|
|
|
100
|
|
0 0
|
|
|
|
EOff
|
|
|
|
25
|
|
|
|
50
|
|
|
|
75
|
|
|
|
100
|
|
|
|
125
|
|
|
|
150
|
|
|
|
175
|
|
|
|
Junction Temperature, TJ (°C)
|
|
|
|
Figure 26. Clamped Inductive Switching Energy vs. Temperature
|
|
|
|
Figure 28. Switching Times Definition
|
|
|
|
7
|
|
|
|
C3M0065090D Rev. D, 06-2019
|
|
|
|
Test Circuit Schematic
|
|
VDC
|
|
|
|
RG
|
|
VGS= - 4V
|
|
|
|
Q1
|
|
C3M0065090D
|
|
|
|
Q2 RG
|
|
C3M0065090D D.U.T
|
|
|
|
Figure 30. Clamped Inductive Switching Waveform Test Circuit
|
|
|
|
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
|
|
|
|
8
|
|
|
|
C3M0065090D Rev. D, 06-2019
|
|
|
|
Package Dimensions
|
|
Package TO-247-3
|
|
|
|
T
|
|
|
|
U
|
|
|
|
Pinout Information:
|
|
|
|
• Pin 1 = Gate
|
|
|
|
• Pin 2, 4 = Drain
|
|
|
|
V
|
|
|
|
W
|
|
|
|
• Pin 3 = Source
|
|
|
|
Recommended Solder Pad Layout
|
|
|
|
POS
|
|
A A1 A2 b b1 b2 b3 b4 c D D1 D2 E E1 E2 E3 E4 e N L L1 ØP Q S T U V W
|
|
|
|
Inches
|
|
|
|
Min
|
|
|
|
Max
|
|
|
|
.190
|
|
|
|
.205
|
|
|
|
.090
|
|
|
|
.100
|
|
|
|
.075
|
|
|
|
.085
|
|
|
|
.042
|
|
|
|
.052
|
|
|
|
.075
|
|
|
|
.095
|
|
|
|
.075
|
|
|
|
.085
|
|
|
|
.113
|
|
|
|
.133
|
|
|
|
.113
|
|
|
|
.123
|
|
|
|
.022
|
|
|
|
.027
|
|
|
|
.819
|
|
|
|
.831
|
|
|
|
.640
|
|
|
|
.695
|
|
|
|
.037
|
|
|
|
.049
|
|
|
|
.620
|
|
|
|
.635
|
|
|
|
.516
|
|
|
|
.557
|
|
|
|
.145
|
|
|
|
.201
|
|
|
|
.039
|
|
|
|
.075
|
|
|
|
.487
|
|
|
|
.529
|
|
|
|
.214 BSC
|
|
|
|
3
|
|
|
|
.780
|
|
|
|
.800
|
|
|
|
.161
|
|
|
|
.173
|
|
|
|
.138
|
|
|
|
.144
|
|
|
|
.216
|
|
|
|
.236
|
|
|
|
.238
|
|
|
|
.248
|
|
|
|
9˚
|
|
|
|
11˚
|
|
|
|
9˚
|
|
|
|
11˚
|
|
|
|
2˚
|
|
|
|
8˚
|
|
|
|
2˚
|
|
|
|
8˚
|
|
|
|
Millimeters
|
|
|
|
Min
|
|
|
|
Max
|
|
|
|
4.83
|
|
|
|
5.21
|
|
|
|
2.29
|
|
|
|
2.54
|
|
|
|
1.91
|
|
|
|
2.16
|
|
|
|
1.07
|
|
|
|
1.33
|
|
|
|
1.91
|
|
|
|
2.41
|
|
|
|
1.91
|
|
|
|
2.16
|
|
|
|
2.87
|
|
|
|
3.38
|
|
|
|
2.87
|
|
|
|
3.13
|
|
|
|
0.55
|
|
|
|
0.68
|
|
|
|
20.80
|
|
|
|
21.10
|
|
|
|
16.25
|
|
|
|
17.65
|
|
|
|
0.95
|
|
|
|
1.25
|
|
|
|
15.75
|
|
|
|
16.13
|
|
|
|
13.10
|
|
|
|
14.15
|
|
|
|
3.68
|
|
|
|
5.10
|
|
|
|
1.00
|
|
|
|
1.90
|
|
|
|
12.38
|
|
|
|
13.43
|
|
|
|
5.44 BSC
|
|
|
|
3
|
|
|
|
19.81
|
|
|
|
20.32
|
|
|
|
4.10
|
|
|
|
4.40
|
|
|
|
3.51
|
|
|
|
3.65
|
|
|
|
5.49
|
|
|
|
6.00
|
|
|
|
6.04
|
|
|
|
6.30
|
|
|
|
9˚
|
|
|
|
11˚
|
|
|
|
9˚
|
|
|
|
11˚
|
|
|
|
2˚
|
|
|
|
8˚
|
|
|
|
2˚
|
|
|
|
8˚
|
|
|
|
TO-247-3
|
|
|
|
9
|
|
|
|
C3M0065090D Rev. D, 06-2019
|
|
|
|
Notes
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• RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
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• REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
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• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
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nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems.
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Related Links
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• SPICE Models: http://wolfspeed.com/power/tools-and-support • SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support • SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
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Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
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C3M0065090D Rev. D, 06-2019
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Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power
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Mouser Electronics
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Authorized Distributor
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Click to View Pricing, Inventory, Delivery & Lifecycle Information:
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Cree, Inc.:
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C3M0065090D
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